YAG-200-4 Series Quadrant Photodiodes - Si PIN - 5.1 mm
Excelitas Technologies’ YAG series of Silicon PIN quadrant detectors are high-performance N-type or P-type Si PIN photodiodes in hermetically sealed TO packages.
These photodiodes perform well over the 400 nm to 1100 nm wavelength range, with enhanced IR responsivity, making them ideal for 1064 nm detection applications.
A guard ring collects current generated outside the active area, ensuring the current will not contribute to noise.
Because of its large active area, the device is useful in obtaining position information from both focused and defocused spots in either pulsed or CW mode.
主要特征：
- High quantum efficiency at 1064 nm
- Crosstalk <1% between elements
- No “dead zones” between quadrants (P-type)
- Package style: Hermetic TO-can
- Available in N- and P-type configuration with optional heater and anti-reflection coating
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Number of elements: 4
Active diameter (mm): 5.1
Active area per element (mm²): 5.1
Typical Capacitance per quadrant (pF): 12
Typical responsivity at 900 nm (A/W): 0.60
Typical responsivity at 1064 nm (A/W): 0.44
Typical responsivity at 1064 nm for -AR and -ARH suffix (A/W): 0.47
Typical rise time, 50Ω load (ns): 12
Maximal operating voltage (V): 180
Minimal Breakdown Voltage (V): 200
Typical capacitance per element (pF): 2
Maximal capacitance per element (pF): 10
Typical dark current per element (nA): 10
Maximal dark current per element (nA): 50
Typical noise current per element (pA/√Hz): 0.10
Noise equivalent power (NEP) at 900 nm per element (pW/√Hz): 0.10
Noise equivalent power (NEP) at 1064 nm per element (pW/√Hz): 0.15
Heater resistance at 25℃ (-H suffix) (kΩ): 10±2
Heater peak power (-H suffix) (W): 4
Maximal heater DC voltage (-H suffix) (V): 12
Package: TO-8 custom
Storage temperature range (℃): -55 to 125
操作的脾气ature range (℃): -55 to 125
操作的脾气ature range for -H suffix (℃): -40 to 85
Maximal Heater Voltage (V): 12
Number of elements: 4
Active diameter (mm): 5.1
Active area per element (mm²): 5.1
Typical Capacitance per quadrant (pF): 12
Typical responsivity at 900 nm (A/W): 0.60
Typical responsivity at 1064 nm (A/W): 0.44
Typical responsivity at 1064 nm for -AR and -ARH suffix (A/W): 0.47
Typical rise time, 50Ω load (ns): 12
Maximal operating voltage (V): 180
Minimal Breakdown Voltage (V): 200
Typical capacitance per element (pF): 2
Maximal capacitance per element (pF): 10
Typical dark current per element (nA): 10
Maximal dark current per element (nA): 50
Typical noise current per element (pA/√Hz): 0.10
Noise equivalent power (NEP) at 900 nm per element (pW/√Hz): 0.10
Noise equivalent power (NEP) at 1064 nm per element (pW/√Hz): 0.15
Heater resistance at 25℃ (-H suffix) (kΩ): 10±2
Heater peak power (-H suffix) (W): 4
Maximal heater DC voltage (-H suffix) (V): 12
Package: TO-8 custom
Storage temperature range (℃): -55 to 125
操作的脾气ature range (℃): -55 to 125
操作的脾气ature range for -H suffix (℃): -40 to 85
Maximal Heater Voltage (V): 12