YAG-100 Series Photodiodes - Si PIN - 2.54 mm
Excelitas Technologies的硅引脚探测器系列是高性能N型或P型Si销光电二极管，用于密封到包装。
These photodiodes perform well over the 400 nm to 1100 nm wavelength range, with enhanced IR responsivity, making them ideal for 1064 nm detection applications.
A guard ring collects current generated outside the active area, ensuring the current will not contribute to noise.
Because of its large active area, the device is useful in obtaining position information from both focused and defocused spots in either pulsed or CW mode.
Key Features and Benefits:
- 高量子效率为1064 nm
- 包装风格：密封至5罐
- Available in N- and P-type configuration
- 主动直径（mm）：2.5
主动直径（mm）：2.5
²活跃区域每个元素(毫米):4.9
Typical Capacitance per quadrant (pF): 12
Typical responsivity at 900 nm (A/W): 0.60
Typical responsivity at 1064 nm (A/W): 0.44
Typical responsivity at 1064 nm for -AR suffix (A/W): 0.47
Typical rise time, 50Ω load (ns): 12
Maximal operating voltage (V): 180
最小击穿电压（V）：200
Typical capacitance (pF): 2.5
典型的暗电流（NA）：11
Maximal dark current (nA): 20
典型的噪声电流（PA /√HZ）：0.06
Noise equivalent power (NEP) at 1064 nm (pW/√HZ）：0.08
Package: TO-8 custom
Storage temperature range (℃): -55 to 125
工作温度范围（℃）：-55至125
主动直径（mm）：2.5
²活跃区域每个元素(毫米):4.9
Typical Capacitance per quadrant (pF): 12
Typical responsivity at 900 nm (A/W): 0.60
Typical responsivity at 1064 nm (A/W): 0.44
Typical responsivity at 1064 nm for -AR suffix (A/W): 0.47
Typical rise time, 50Ω load (ns): 12
Maximal operating voltage (V): 180
最小击穿电压（V）：200
Typical capacitance (pF): 2.5
典型的暗电流（NA）：11
Maximal dark current (nA): 20
典型的噪声电流（PA /√HZ）：0.06
Noise equivalent power (NEP) at 1064 nm (pW/√HZ）：0.08
Package: TO-8 custom
Storage temperature range (℃): -55 to 125
工作温度范围（℃）：-55至125