This fast-response silicon photodiode provides a 5.269 mm2活动区域and spectral response between 400 nm and 1150 nm. Our series of fast-response photodiodes are designed for low-junction capacitance to achieve faster response time. They are suitable for operation under reverse bias, which increases the speed of response, but can also be used in photovoltaic mode. These photodiodes have excellent response in the IR region and are well matched to IR LEDs.
特点与优势:
- IR光谱范围可见
- 峰值波长:925nm
- Medium size active area
- 表面贴装包装
- 侧面安装方向
- Tape and reel packaging
- 1 to 2% linearity over 7 to 9 decades
- 低暗电流
- 高分流抵抗力
- 低电容,
- 反应快
- 符合rohs
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- Smoke detection
- 条形码扫描
- 轻米
- 脉冲血管计
Active area = 5.269 mm2活动区域
短路电流= 100 fc,2850 k的最小75μA
Dark Current = Maximum 20 nA at 10 V Reverse Bias
结电容= 3 V反向偏置的最大50 PF
Spectral Range = 400 nm to 1150 nm
峰值谱响应= 925nm
峰值波长=典型0.60 A / W的灵敏度
Angular Response = ±42 Degrees at 50 % Response
Active area = 5.269 mm2活动区域
短路电流= 100 fc,2850 k的最小75μA
Dark Current = Maximum 20 nA at 10 V Reverse Bias
结电容= 3 V反向偏置的最大50 PF
Spectral Range = 400 nm to 1150 nm
峰值谱响应= 925nm
峰值波长=典型0.60 A / W的灵敏度
Angular Response = ±42 Degrees at 50 % Response