vt.P1232H - Si PD, T1 3/4 Lensed, 2.326mm2
VTP1232H是硅光电二极管在透明的端环的T1¾透镜封装中，在可见和接近IR光谱范围内具有增强的响应。该光电二极管具有非常高的分流电阻，低暗电流和低电容。
该快速响应硅光电二极管提供2.326毫米2有源区域，设计用于400nm和1100nm之间的光谱响应。
This series of photodiodes is designed for low-junction capacitance to achieve fast response times and can be operated under reverse bias to decrease the capacitance in order to further increase the speed of response. These photodiodes can also be operated in photovoltaic mode if speed of response is not critical for the application in which they are being used.
These photodiodes have excellent response in the IR spectral range and are well matched to the Excelitas Infrared LED VTE Series.
Features & Benefits:
- 在IR光谱范围附近可见
- 超过7到9年的线性度为1至2％
- Low dark current
- High shunt resistance
- Low capacitance
- Fast response
- High reverse voltage rating
- RoHs compliant
bob投注体育信赖吗应用程序:
- 烟雾检测
- Barcode scanning
- Light meters
- Pulse oximeters
有源区= 2.326毫米2active area
Short Circuit Current = Minimum 100 µA at 100 fc, 2850 K
响应=最小值0.06 a /（w / cm2), 880 nm
暗电流= 10 V反向偏置的最多25 NA
结电容= 0 V偏置的最大0.3 NF
Spectral Range = 400 nm to 1100 nm
峰值谱响应= 920 nm
Sensitivity at peak Wavelength = Typical 0.60 A/W
角度响应= 50％响应的±20度
有源区= 2.326毫米2active area
Short Circuit Current = Minimum 100 µA at 100 fc, 2850 K
响应=最小值0.06 a /（w / cm2), 880 nm
暗电流= 10 V反向偏置的最多25 NA
结电容= 0 V偏置的最大0.3 NF
Spectral Range = 400 nm to 1100 nm
峰值谱响应= 920 nm
Sensitivity at peak Wavelength = Typical 0.60 A/W
角度响应= 50％响应的±20度