VTB8440H - Si PD, 8mm ceramic, 5.16mm2
The VTB8440H Blue-Enhanced Silicon Photodiode is designed in a 8 mm recessed ceramic package protected with a clear epoxy layer. This Si photodiode provides an enhanced response in the blue spectral range and exhibits a very high shunt resistance and a low dark current.
The VTB8440H blue enhanced silicon photodiode provides a 5.16 mm2active area and a spectral response between 320 and 1100 nm. This series of P on N silicon planar photodiodes are designed for optimum response through the visible part of the spectrum.
These photodiodes are primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. They also exhibit very high shunt resistance, a characteristic which leads to low offsets when used in high gain trans-impedance op-amp circuits.
Features & Benefits:
- UV to Near IR spectral range
- 1%-2% linearity over 7 to 9 decades
- Very low dark current
- Very high shunt resistance
- RoHS compliant
bob投注体育信赖吗应用程序:
- UV and blue light sensing
- Light meters
- Flame monitoring
- Photometry
Active area = 5.16 mm2
Short Circuit Current = Minimum 35 µA at 100 fc, 2850 K
Dark Current = Maximum 2 nA at 2 V Reverse Bias
Junction Capacitance = Typical 1.0 nF at 0 V Bias
Spectral Range = 320 nm to 1100 nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.5 A/W
Angular Response = ±50 Degrees at 50% Response
Active area = 5.16 mm2
Short Circuit Current = Minimum 35 µA at 100 fc, 2850 K
Dark Current = Maximum 2 nA at 2 V Reverse Bias
Junction Capacitance = Typical 1.0 nF at 0 V Bias
Spectral Range = 320 nm to 1100 nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.5 A/W
Angular Response = ±50 Degrees at 50% Response