VTB8341H-硅钯，陶瓷，5.16mm2
The VTB8341H is a blue-enhanced silicon photodiode in a ceramic package protected with a thick layer of clear epoxy. This photodiode provides an enhanced response in the blue spectral range, as well as exhibits a very high shunt resistance and a low dark current.
This blue-enhanced silicon photodiode comes in a ceramic package, coated with a thick layer of epoxy. It provides a 5.16 mm2有效面积和光谱响应在320和1100纳米之间。
This series of P on N Silicon planar photodiodes has been designed for optimum response through the visible part of the spectrum. These photodiodes are primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. They have also been designed to exhibit very high shunt resistance, a characteristic which leads to low offsets when used in high gain trans-impedance op-amp circuits.
特点和优点：
- 紫外到近红外光谱范围
- 1%-2% linearity over 7 to 9 decades
- 极低暗电流
- 非常高的分流电阻
- 符合RoHS
bob投注体育信赖吗应用：
- 紫外线和蓝光感应
- 光度表
- 火焰监测
- Photometry
Active area = 5.16 mm2
Short Circuit Current = Minimum 35 µA at 100 fc, 2850 K
暗电流=2V反向偏压时最大100Pa
结电容=0 V偏置下的典型1.0 nF
光谱范围=320 nm至1100 nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.5 A/W
Angular Response = ±60 Degrees at 50% Response
Active area = 5.16 mm2
Short Circuit Current = Minimum 35 µA at 100 fc, 2850 K
暗电流=2V反向偏压时最大100Pa
结电容=0 V偏置下的典型1.0 nF
光谱范围=320 nm至1100 nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.5 A/W
Angular Response = ±60 Degrees at 50% Response