该硅光电二极管提供37.7毫米2active area and is designed for optimum spectral response between 320 nm and 1100 nm.
This series of P on N Silicon planar photodiodes has been designed for optimum response through the visible part of the spectrum. These photodiodes are primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. They have also been designed to exhibit very high shunt resistance, a characteristic which leads to low offsets when used in high gain trans-impedance op-amp circuits.
特点与优势：
- UV接近IR光谱范围
- 1％-2％的线性度超过7到9年，
- 非常低的暗电流
- 非常高的分流抗性
- 符合rohs
bob投注体育信赖吗应用程序：
- 紫外线和蓝光感应
- 轻米
- 火焰监测
- Photometry
有源区= 37.7毫米2
短路电流=在100 fc，2850 k下最小260μA
暗电流= 2 V反向偏置的最多2NA
Junction Capacitance = Typical 8 nF at 0 V Bias
光谱范围= 320nm至1100nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.5 A/W
角度响应= 50％反应下的±55度
有源区= 37.7毫米2
短路电流=在100 fc，2850 k下最小260μA
暗电流= 2 V反向偏置的最多2NA
Junction Capacitance = Typical 8 nF at 0 V Bias
光谱范围= 320nm至1100nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.5 A/W
角度响应= 50％反应下的±55度