C30954EH - Si APD, 0.8mm, TO-5 Package
The C30954EH Long-Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) provides a 0.8 mm active area diameter and high quantum efficiency at 1060 nm. Designed in a TO-5 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.
Features & Benefits:
- Active diameter 0.8mm
- 高量子效率为1060nm
- 快速响应时间
- Wide operating temperature range
- Low capacitance
- Hermetically-sealed packages
- RoHS compliant
- TEC option available
bob投注体育信赖吗应用程序:
- 范围发现
- LiDAR
- YAG laser detection
Active Area: 0.5 mm²
Active Diameter: 0.8 mm
击穿电压：> 300,375，<475 V
电容:2 pf
暗电流：50NA
Gain: 120
Noise Current: 1 pA/√Hz
包裹：到5
Peak Sensitivity Wavelength: 900 nm
响应性：
- 75 A/W at 900 nm,
- 36 a / w 1050 nm，
- 在1150nm处5 a / w
上升/下降时间：2ns
温度系数：2.4 V /°C
Vop范围:275 -450 V
Wavelength: 400-1100 nm
Active Area: 0.5 mm²
Active Diameter: 0.8 mm
击穿电压：> 300,375，<475 V
电容:2 pf
暗电流：50NA
Gain: 120
Noise Current: 1 pA/√Hz
包裹：到5
Peak Sensitivity Wavelength: 900 nm
响应性：
- 75 A/W at 900 nm,
- 36 a / w 1050 nm，
- 在1150nm处5 a / w
上升/下降时间：2ns
温度系数：2.4 V /°C
Vop范围:275 -450 V
Wavelength: 400-1100 nm