
PART/ C30737PH-230-90N
C30737PH-230-90N - Si APD, 230um, Plastic, 900nm enhanced
The C30737PH-230-90N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 230 µm and enhanced 900 nm response in a Plastic T 1¾ package.
主要特点:
- High responsivity between 500 and 1000 nm
- 在所有波长的低噪声和极快的上升时间,频率响应高于380MHz
- Active diameter of 230μm and optimized for 900 nm peak sensitivity
- Plastic T 1-3/4 option "PH"
bob投注体育信赖吗应用程序:
- LiDAR
- Laser-range finding
- 安全扫描
- Applications requiring a low-cost, high-performing detector
主动直径:230μm
Peak Sensitivity Wavelength: 900 nm
击穿电压VBD:180-260
VOP温度系数M:1.3 V /°C
Gain: 100 @900nm
响应度:800 nm的60 a / w
Dark Current Id: 0.05 <0.5 nA
噪声电流:0.1 PA /√Hz
电容:0.6 pF
Rise/Fall Time: 0.9 ns R load = 50Ω
截止频率:380 MHz
存储温度:-50°C至+ 100°C
操作温度:-40°C至+ 85°C
Package: Plastic T 1¾ through-hole
主动直径:230μm
Peak Sensitivity Wavelength: 900 nm
击穿电压VBD:180-260
VOP温度系数M:1.3 V /°C
Gain: 100 @900nm
响应度:800 nm的60 a / w
Dark Current Id: 0.05 <0.5 nA
噪声电流:0.1 PA /√Hz
电容:0.6 pF
Rise/Fall Time: 0.9 ns R load = 50Ω
截止频率:380 MHz
存储温度:-50°C至+ 100°C
操作温度:-40°C至+ 85°C
Package: Plastic T 1¾ through-hole