C30737MH-500-90N - Si APD, 500um, LLC, 900nm enhanced
The C30737MH-500-90N Silicon Avalanche Photodiode (APD) provides an active diameter of 500 µm with enhanced 900 nm response in a leadless laminated carrier (LLC).
主要特点：
- High responsivity between 500 and 1000 nm
- Low noise and extremely fast rise time at all wavelengths with a frequency response above 380 MHz
- Active diameter of 500μm and optimized for 900 nm peak sensitivity
- 无侵入式层压载体选项“MH”
bob投注体育信赖吗应用程序:
- LiDAR
- Laser-range finding
- 安全扫描
- Applications requiring a low-cost, high-performing detector
Active Diameter: 500μm
Peak Sensitivity Wavelength: 900 nm
击穿电压VBD：180-260（烧结可用）
VOP温度系数M：1.3 V /°C
遗传算法in: 100 @900nm
响应度：800 nm的60 a / w
Dark Current Id: 0.1 <1 nA
噪声电流：0.1 PA /√Hz
Capacitance: 1 pF
Rise/Fall Time: 0.9 ns R load = 50Ω
截止频率：380 MHz
存储温度：-50°C至+ 100°C
操作温度：-40°C至+ 85°C
包装：2x1.75mm顶部查看FR4环氧树脂，无侵扰夹层载体（LLC）
Active Diameter: 500μm
Peak Sensitivity Wavelength: 900 nm
击穿电压VBD：180-260（烧结可用）
VOP温度系数M：1.3 V /°C
遗传算法in: 100 @900nm
响应度：800 nm的60 a / w
Dark Current Id: 0.1 <1 nA
噪声电流：0.1 PA /√Hz
Capacitance: 1 pF
Rise/Fall Time: 0.9 ns R load = 50Ω
截止频率：380 MHz
存储温度：-50°C至+ 100°C
操作温度：-40°C至+ 85°C
包装：2x1.75mm顶部查看FR4环氧树脂，无侵扰夹层载体（LLC）