excelitas.  InGaAs APD C30662 in Ceramic Carrier
部分/ C30662ECERH-1

C30662ECERH-1 - InGaAs APD, 200um, Ceramic

C30662ECERH-1大面积IngaAs雪崩光电二极管(APD)在陶瓷基座载波中提供200μm的有源直径,具有Delta VBD-Vop> 4V。

The Excelitas C30662ECERH-1 APD is optimized for wavelength of 1550 nm and suitable for use in eye-safe laser range finding systems.

特点与优势:

  • 大面积IngaAs APD200μm直径
  • 陶瓷提交载体
  • Spectral response 1000 to 1700 nm
  • 低噪音和暗电流
  • High gain and quantum efficiency
  • 为Delta-V> 4V选择
  • 带宽超过850 MHz
  • Custom modifications available to meet specific needs

bob投注体育信赖吗应用程序:

  • Laser-range finding, scanning and video imaging
  • 光学和自由空间通信
  • 扫描和视频成像
  • 光学和自由空间通信分光光度计和反射仪

Active Diameter: 200 µm
Breakdown Voltage: 40-70 V
Vbd-Vop: >4V
Temperature Coefficient: 0.14 V/°C
响应性:9.3 A / W @ 1550 nm
暗电流:45 na
光谱噪声电流:0.7 PA /√Hz
电容:2.5 PF
带宽:850 MHz
量子效率:75%@ 1300-1550 nm
收益:20
包装:2x4mm陶瓷子/

Active Diameter: 200 µm
Breakdown Voltage: 40-70 V
Vbd-Vop: >4V
Temperature Coefficient: 0.14 V/°C
响应性:9.3 A / W @ 1550 nm
暗电流:45 na
光谱噪声电流:0.7 PA /√Hz
电容:2.5 PF
带宽:850 MHz
量子效率:75%@ 1300-1550 nm
收益:20
包装:2x4mm陶瓷子/

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