C30659-900-R5BH - SI APD接收器，0.5mm，至8,200MHz
The C30659 Series includes a Silicon (Si) or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation. Our C30659-900-R5BH device has a C30902EH Si APD with a peak response at 900 nm and 0.5 mm active diameter.
Excelitas C30659系列采用反相放大器设计，具有用于输出缓冲级的发射器跟随器。
The Si APDs used in these devices are the same as used in the Excelitas’ C30817EH, C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low-noise GaAs FET front end designed to operate at higher transimpedance than our standard C30950 Series.
- System bandwidth: 200 MHz
- 超低噪声等效电源（NEP）：
- 830 nm的35 fw /√hz
- 900 nm的40 fw /√hz
- Spectral response range: 400 to 1100 nm
- 典型功耗：150 mW
- ±5 V放大器工作电压
- 50Ω交流负载能力（交流耦合）
- Hermetically-sealed TO-8 package
- 高可靠性
- System bandwidth: 200 MHz
- 超低噪声等效电源（NEP）：
- 830 nm的35 fw /√hz
- 900 nm的40 fw /√hz
- Spectral response range: 400 to 1100 nm
- 典型功耗：150 mW
- ±5 V放大器工作电压
- 50Ω交流负载能力（交流耦合）
- Hermetically-sealed TO-8 package
- 高可靠性