C30659-1550-R08BH-InGaAs APD接收器，80um，TO-82000MHz
The C30659 Series of InGaAs APD receivers includes a Silicon (Si) or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation.
C30659系列采用反相放大器设计，发射极跟随器用作输出缓冲级。
The Si APDs used in these devices are the same as used in the Excelitas’ C30817EH, C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low noise GaAs FET front end designed to operate at higher transimpedance than our standard C30950 Series.
C30659-1550-R08BH设备包括一个Excelitas C30645EH InGaAs APD，优化波长为1550 nm。
- 系统带宽：200MHz
- 超低噪声等效功率（NEP）
- 1300 nm时为250 fW/√Hz
- 1550 nm时为220 fW/√Hz
- Spectral response range: Peak at 1550 nm
- Typical power consumption: 150 mW
- ±5 V amplifier operating voltages
- 50 Ω AC load capability (AC-Coupled)
- 密封TO-8包装
- High reliability
- 系统带宽：200MHz
- 超低噪声等效功率（NEP）
- 1300 nm时为250 fW/√Hz
- 1550 nm时为220 fW/√Hz
- Spectral response range: Peak at 1550 nm
- Typical power consumption: 150 mW
- ±5 V amplifier operating voltages
- 50 Ω AC load capability (AC-Coupled)
- 密封TO-8包装
- High reliability