C30659-1060-R8BH - Si APD Receiver, 0.8mm, TO-8, 200MHz
The C30659 Series of Hybrid Optical APD Receivers includes a Silicon (Si) or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package to allow for ultra-low noise operation. Our C30659-1060-R8BH device has a C30954EH Si APD, optimized at 1060 nm and a 0.8 mm active diameter.
The Excelitas C30659 Series features an inverting amplifier design with an emitter follower used as an output buffer stage.
The Si APDs used in these devices are the same as used in the Excelitas’ C30817EH, C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low noise GaAs FET front end designed to operate at higher transimpedance than our standard C30950 Series.
- 系统带宽：200 MHz
- 超低噪声等效功率（NEP）
- 55 fW /√赫兹在900海里
- 100 FW /√Hz，1064 nm
- 光谱响应范围：400至1100nm，在1060nm处优化
- Typical power consumption: 150 mW
- ±5 V amplifier operating voltages
- 50 Ω AC load capability (AC-Coupled)
- 密封到-8包装
- High reliability
- 系统带宽：200 MHz
- 超低噪声等效功率（NEP）
- 55 fW /√赫兹在900海里
- 100 FW /√Hz，1064 nm
- 光谱响应范围：400至1100nm，在1060nm处优化
- Typical power consumption: 150 mW
- ±5 V amplifier operating voltages
- 50 Ω AC load capability (AC-Coupled)
- 密封到-8包装
- High reliability