Silicon PIN Photodiodes

C30845EH is a high quality N-type Silicon PIN quadrant photodiode in a hermetically sealed TO-8 package, designed for the 300 to 1100 nm wavelength range. Because of the large area (50 mm²), the device is useful in obtaining position information from both focused and defocused spots in either pulsed or CW mode.

C30807EH是一种高质量的N型硅销光电二极管，其具有1.0mm的主动直径芯片，该芯片是为300nm至1100nm波长范围设计的气密密封至-18封装。本产品系列具有广泛的光敏表面积，0.8mm²至100mm²。

C30808EH是一种硅销光电二极管，其具有2.5mm有源直径芯片的芯片，该芯片在气密密封至-5封装中，设计用于300至1100nm波长范围。本产品系列具有广泛的光敏表面积，0.8mm²至100mm²。

C30822EH是一种硅销光电二极管，其具有5.0mm有源直径芯片，其在气密密封至-8封装中，设计为300nm至1100nm波长范围。本产品系列具有广泛的光敏表面积，0.8mm²至100mm²。

The FFD-100H is a Large-Area Silicon PIN Photodiode with a 2.5 mm active diameter in a hermetically-sealed TO-5 package. This photodiode produces high responsivity from 400 nm to 1150 nm with a peak responsivity at 920 nm. It features an ultra-fast rise and fall time, low NEP and a low operating voltage.

The FFD-200H is a Large-area Silicon PIN Photodiode with a 5.0 mm active diameter in a hermetically-sealed TO-8 package. This photodiode provides high responsivity from 400 nm to 1150 nm, with a peak responsivity at 850 nm. It also features an ultra-fast rise and fall time, low NEP and a low operating voltage.

FND-100GH是一个大面积硅销光电二极管，其具有2.5mm的主动直径，在气密密封到-5封装中，具有玻璃窗。该光电二极管从400nm至1150nm提供高响应度，在920nm处具有峰值响应度。它还具有超快速上升和下降时间，NEP和低工作电压。

FND-100QH是一个大面积硅销光电二极管，其具有2.5mm的主动直径，在具有石英窗口的气密密封至5封装中。该光电二极管从200nm至1150nm提供高响应度，在920nm处具有峰值响应度。FND-100QH有一个石英窗口，将光电二极管的UV响应扩展到200nm。它还具有超快速上升和下降时间，NEP和低工作电压。

The HUV-1100BGH is a UV-enhanced, large-area Silicon PIN Amplifier Module with a 2.5 mm active diameter chip in a hermetic TO package designed for the 250 nm to 1150 nm wavelength range. The HUV-1100 photodiode uses an external feedback resistor for bandwidth flexibility.

HUV-2000BH是一种UV增强型硅引脚放大器模块，具有5.5mm的主动直径芯片，在密封件中，并为250nm至1150nm波长范围设计。

UV-040BQH是一种UV增强型硅销光电二极管，其具有1.0mm的有源直径芯片，在气密密封到-5封装中，该光电二极管设计用于250nm至1150nm波长范围，峰值灵敏度为900nm。它还具有低噪声，宽度范围和线性度在宽动态范围内。

UV-100BQH是UV增强型硅销光电二极管，其在气密密封至-5封装中具有2.5mm有源直径芯片。该光电二极管设计用于250nm至1150nm波长范围，峰值灵敏度为900nm。它还具有低噪声，宽度范围和线性度在宽动态范围内。

UV-215BGH / 340是UV增强型硅销光电二极管，其具有5.5mm的主动直径芯片，在气密密封到-8封装。该光电二极管设计用于250nm至1150nm波长范围，峰值灵敏度为900nm。它还具有低噪声，宽度范围和线性度在宽动态范围内。

The UV-215BQH is a UV-enhanced Silicon PIN Photodiode with a 5.5 mm active diameter chip n a hermetically sealed TO-8 package. This photodiode is designed for the 185 nm to 1150 nm wavelength range with a peak sensitivity at 900 nm. It also features low noise, a wide spectral range and linearity over a wide dynamic range.

UV-245BGH是一种高质量的UV增强型硅销光电二极管，具有4.4mm×4.7mm的有源区域芯片，在密封到-5包装中。该光电二极管设计用于250nm至1150nm波长范围，峰值灵敏度为900nm。它还具有低噪声，宽度范围和线性度在宽动态范围内。

This UV-245BQH is a UV-enhanced Silicon PIN Photodiode with a 4.4 mm x 4.7 mm active area chip in a hermetically-sealed TO-5 package. This photodidoe is designed for the 185 nm to 1150 nm wavelength range with a peak sensitivity at 900 nm. It also features low noise, a wide spectral range and linearity over a wide dynamic range.

C30741PH-15S是一种高速硅销光电二极管，具有1.5×1.5mm有源区芯片，在T 1 1透明塑料包装中。

C30741PFH-15S is a High-Speed Silicon PIN Photodiode with a 1.5 x 1.5 mm active area chip in a T1 ¾ visible-blocking plastic package.